Photoluminescent properties in quantum-sized structures Cd0,83Zn0.17Te/ZnTe/GaAs of GaAs and AlXGa1-XAs

dc.contributor.author	Sharibaev M
dc.contributor.author	Sayitova S
dc.contributor.author	Najepova S
dc.date.accessioned	2026-01-11T20:48:27Z
dc.date.issued	2026-01-10
dc.description.abstract	The change in optical characteristics was determined with the influence of electron and X-ray irradiation in the buffer layers of quantum-sized structures Cd0,83Zn0.17Te/ZnTe/GaAs. Changes in the maxima, bands corresponding to 500 nm and 560-580 nm, associated with transitions on DA pairs, as well as bands I1=2.48 eV (500 nm) and I2=2.21 eV (550 nm) were determined. The I2 band is attributed to a transition associated with intrinsic defects in the ES.
dc.format	application/pdf
dc.identifier.uri	https://geniusjournals.org/index.php/ejpcm/article/view/7251
dc.identifier.uri	https://asianeducationindex.com/handle/123456789/110619
dc.language.iso	eng
dc.publisher	Genius Journals
dc.relation	https://geniusjournals.org/index.php/ejpcm/article/view/7251/5984
dc.rights	https://creativecommons.org/licenses/by-nc/4.0
dc.source	Eurasian Journal of Physics,Chemistry and Mathematics; Vol. 51 (2026): EJPCM; 5-7
dc.source	2795-7667
dc.subject	Quantum-sized structures
dc.subject	extended defects
dc.title	Photoluminescent properties in quantum-sized structures Cd0,83Zn0.17Te/ZnTe/GaAs of GaAs and AlXGa1-XAs
dc.type	info:eu-repo/semantics/article
dc.type	info:eu-repo/semantics/publishedVersion
dc.type	Peer-reviewed Article

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