Electrophysical properties of singlecrystal silicon sequentially doped with sulfur and zinc impurity atoms

dc.contributor.author	M.K. Haqqulov
dc.date.accessioned	2026-01-02T11:47:31Z
dc.date.issued	2023-11-10
dc.description.abstract	The paper studies electro physical properties of single crystal silicon after gradual (firstsulfur, afterwards -zinc) diffusion of impurity atoms of sulfur and zinc. The authors investigated how the Si2ZnS -structured binary compounds form in the crystal lattice of silicon and also studied the physical mechanisms of how additional thermal treatment might influence the process of formation of clusters.
dc.format	application/pdf
dc.identifier.uri	https://geniusjournals.org/index.php/ejpcm/article/view/5224
dc.identifier.uri	https://asianeducationindex.com/handle/123456789/78166
dc.language.iso	eng
dc.publisher	Genius Journals
dc.relation	https://geniusjournals.org/index.php/ejpcm/article/view/5224/4385
dc.rights	https://creativecommons.org/licenses/by-nc-nd/4.0
dc.source	Eurasian Journal of Physics,Chemistry and Mathematics; Vol. 24 (2023): EJPCM; 8-12
dc.source	2795-7667
dc.subject	silicon
dc.subject	siliconsulfur
dc.subject	cluster
dc.subject	impurity
dc.title	Electrophysical properties of singlecrystal silicon sequentially doped with sulfur and zinc impurity atoms
dc.type	info:eu-repo/semantics/article
dc.type	info:eu-repo/semantics/publishedVersion
dc.type	Peer-reviewed Article

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