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THE EFFECT OF THICKNESS ON THE OPTICAL PROPERTIES OF INP QUANTUM DOTS GROWN ON GAAS SURFACES

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dc.contributor.authorSharibaev M.
dc.contributor.authorSaparniyazova G.
dc.contributor.authorBazarbayeva H.
dc.date.accessioned2026-01-27T20:31:15Z
dc.date.issued2026-01-27
dc.description.abstractThis work studies the influence of thickness on the optical properties of InP quantum dots. The spectral position of the maximum corresponding to the InP quantum dot is determined. With an increase in the thickness of the pseudomorphic InAs layer from 1.8 MS to 3 MS, along with a long-wave shift of the quantum dot FL band, its broadening occurred, which indicates the enlargement of quantum dots with simultaneous disorder in their size and shape.
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dc.identifier.urihttps://usajournals.org/index.php/2/article/view/1867
dc.identifier.urihttps://asianeducationindex.com/handle/123456789/112703
dc.language.isoeng
dc.publisherModern American Journals
dc.relationhttps://usajournals.org/index.php/2/article/view/1867/1953
dc.rightshttps://creativecommons.org/licenses/by/4.0
dc.sourceModern American Journal of Engineering, Technology, and Innovation; Vol. 2 No. 1 (2026); 47-51
dc.source3067-7939
dc.subjectQuantum dot, energy shift, FL intensity, deformation.
dc.titleTHE EFFECT OF THICKNESS ON THE OPTICAL PROPERTIES OF INP QUANTUM DOTS GROWN ON GAAS SURFACES
dc.typeinfo:eu-repo/semantics/article
dc.typeinfo:eu-repo/semantics/publishedVersion
dc.typePeer-reviewed Article

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Modern American Journal of Engineering, Technology, and Innovation