STUDY OF PHOTODIODE STRUCTURES IN THE GALLIUM ARSENIDE-CADMIUM SULFIDE SYSTEM
| dc.contributor.author | Gaibov A. G. | |
| dc.contributor.author | Mirkamilova M. S. | |
| dc.contributor.author | Juraev U. E. | |
| dc.date.accessioned | 2025-12-29T09:30:54Z | |
| dc.date.issued | 2024-05-31 | |
| dc.description.abstract | It is shown in this work that in a two barrier photodiode structure with a common modulated base region, the spectral characteristics for the cases of blockable p-n-hetero- (pGaAs-nCdS) and metal-semiconductor (m-pGaAs) junctions can have an identical form, where the formation mechanism is determined by the processes, occurring in the space charge regions located mainly in the common (pGaAs) region. | |
| dc.format | application/pdf | |
| dc.identifier.uri | https://americanjournal.org/index.php/ajper/article/view/2155 | |
| dc.identifier.uri | https://asianeducationindex.com/handle/123456789/15836 | |
| dc.language.iso | eng | |
| dc.publisher | American Journals | |
| dc.relation | https://americanjournal.org/index.php/ajper/article/view/2155/2019 | |
| dc.rights | https://creativecommons.org/licenses/by-nc/4.0 | |
| dc.source | American Journal of Pedagogical and Educational Research; Vol. 24 (2024); 117-120 | |
| dc.source | 2832-9791 | |
| dc.subject | Photosensitiveity, gallium arsenide, double-barrier structure, saturation currents, current-voltage characteristic. | |
| dc.title | STUDY OF PHOTODIODE STRUCTURES IN THE GALLIUM ARSENIDE-CADMIUM SULFIDE SYSTEM | |
| dc.type | info:eu-repo/semantics/article | |
| dc.type | info:eu-repo/semantics/publishedVersion | |
| dc.type | Peer-reviewed Article |
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