The influence of ytterbium on the optical properties of epitaxial films of GaAs and AlXGa1-XAs

dc.contributor.author	Sharibaev M
dc.contributor.author	Sayitova S
dc.contributor.author	Atakhanova L
dc.date.accessioned	2026-01-11T20:48:27Z
dc.date.issued	2026-01-10
dc.description.abstract	The emission characteristics of epitaxial layers of GaAs and AlXGa1-XAs with the addition of the rare earth element Yb were determined using the photoluminescence method. In the exciton regions of AlXGa1-XAs epitaxial films, new photoluminescence maximum lines were determined for the doped ytterbium atoms. The influence of the ytterbium atom concentration on the change in the photoluminescence characteristics of GaAs and AlXGa1-XAs epitaxial films has been determined.
dc.format	application/pdf
dc.identifier.uri	https://geniusjournals.org/index.php/ejpcm/article/view/7250
dc.identifier.uri	https://asianeducationindex.com/handle/123456789/110618
dc.language.iso	eng
dc.publisher	Genius Journals
dc.relation	https://geniusjournals.org/index.php/ejpcm/article/view/7250/5983
dc.rights	https://creativecommons.org/licenses/by-nc/4.0
dc.source	Eurasian Journal of Physics,Chemistry and Mathematics; Vol. 51 (2026): EJPCM; 1-4
dc.source	2795-7667
dc.subject	photoluminescence
dc.subject	quantum well
dc.subject	temperature
dc.title	The influence of ytterbium on the optical properties of epitaxial films of GaAs and AlXGa1-XAs
dc.type	info:eu-repo/semantics/article
dc.type	info:eu-repo/semantics/publishedVersion
dc.type	Peer-reviewed Article

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