FEATURES OF TRANSFER PHENOMENA IN POLYCRYSTALLINE FILM STRUCTURES

dc.contributor.authorYusupova Dilfuza Aminovna
dc.date.accessioned2025-12-31T12:02:46Z
dc.date.issued2023-05-15
dc.description.abstractThe paper substantiates a physical approach to describing transport phenomena in polycrystalline semiconductor films. The case including the transfer of charge carriers across block boundaries (BB) is considered. The electrical conductivities of the barrier are found in the directions along the axes (perpendicular to the BB) and (parallel to the BB). 
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dc.identifier.urihttps://scholarsdigest.org/index.php/sdjms/article/view/173
dc.identifier.urihttps://asianeducationindex.com/handle/123456789/44408
dc.language.isoeng
dc.publisherScholars Digest Publishing
dc.relationhttps://scholarsdigest.org/index.php/sdjms/article/view/173/162
dc.rightshttps://creativecommons.org/licenses/by-nc/4.0
dc.sourceScholar's Digest- Journal of Multidisciplinary Studies ; Vol. 2 No. 5 (2023); 20-24
dc.source2949-8856
dc.source2949-8880
dc.subjectTransport phenomena, polycrystalline semiconductor films, intergranular barriers, elementary unit of a crystal, dislocations, crystal, diffusion, minimum crystal, a block boundary, a boundaries of crystallites, electrical conductivity of the barrier, anisotropy of conductivity, electrical conductivity of a polycrystalline film, mean free path.
dc.titleFEATURES OF TRANSFER PHENOMENA IN POLYCRYSTALLINE FILM STRUCTURES
dc.typeinfo:eu-repo/semantics/article
dc.typeinfo:eu-repo/semantics/publishedVersion
dc.typePeer-reviewed Article

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