Self-Oscillations Of Current In Silicon: Physical Principles, Mechanisms And Application

dc.contributor.authorUmida Mamadalieva
dc.date.accessioned2026-01-01T12:12:35Z
dc.date.issued2024-12-10
dc.description.abstractThe article discusses self-oscillatory processes in silicon semiconductor devices, such as diodes and transistors, based on nonlinear effects of interaction of electric current and voltage. Particular attention is paid to the physical mechanisms of selfoscillations, including avalanche breakdown, thermal and electrical feedback, as well as their impact on the operation of silicon devices. Examples of the application of selfoscillatory modes in high-frequency signal generators and radio engineering devices are given. Methods for eliminating unwanted oscillations to ensure stable operation of circuits are also discussed.
dc.formatapplication/pdf
dc.identifier.urihttps://zienjournals.com/index.php/tjm/article/view/5816
dc.identifier.uri10.62480/tjms.2024.vol39.5816.pp46-48
dc.identifier.urihttps://asianeducationindex.com/handle/123456789/63582
dc.language.isoeng
dc.publisherZien Journals
dc.relationhttps://zienjournals.com/index.php/tjm/article/view/5816/4739
dc.rightshttps://creativecommons.org/licenses/by-nc/4.0
dc.sourceTexas Journal of Multidisciplinary Studies; Vol. 39 (2024): TJM; 46-48
dc.source2770-0003
dc.subjectSelf-oscillations
dc.subjectSilicon
dc.subjectAvalanche breakdown
dc.subjectNonlinear effects
dc.titleSelf-Oscillations Of Current In Silicon: Physical Principles, Mechanisms And Application
dc.typeinfo:eu-repo/semantics/article
dc.typeinfo:eu-repo/semantics/publishedVersion
dc.typePeer-reviewed Article

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