Features of the temperature dependence of the photoconductivity of the base of Mn4Si7-Si- Mn4Si7 structures

dc.contributor.author	N.F.Zikrillaev
dc.contributor.author	A.J.Khusanov
dc.contributor.author	K.K.Kurbonaliyev
dc.date.accessioned	2026-01-01T10:46:47Z
dc.date.issued	2022-08-24
dc.description.abstract	In this article the influence of infrared radiation and temperature on the parameters of higher silicides of manganese on the surface of silicon created on the basis of impurity manganese atoms is studied. It is shown the possibility of creating effective thermal converters and photodetectors based on structures
dc.format	application/pdf
dc.identifier.uri	https://zienjournals.com/index.php/tjet/article/view/2271
dc.identifier.uri	https://asianeducationindex.com/handle/123456789/60627
dc.language.iso	eng
dc.publisher	Zien Journals
dc.relation	https://zienjournals.com/index.php/tjet/article/view/2271/1912
dc.rights	https://creativecommons.org/licenses/by-nc/4.0
dc.source	Texas Journal of Engineering and Technology; Vol. 11 (2022): TJET; 44-47
dc.source	2770-4491
dc.subject	manganese
dc.subject	silicide
dc.subject	silicon
dc.subject	impurity
dc.title	Features of the temperature dependence of the photoconductivity of the base of Mn4Si7-Si- Mn4Si7 structures
dc.type	info:eu-repo/semantics/article
dc.type	info:eu-repo/semantics/publishedVersion
dc.type	Peer-reviewed Article

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