Ga1-xAlxAs nanostructures grown on the GaAs Surface by Ion Implantation

dc.contributor.author	Sodikjanov J.Sh.
dc.date.accessioned	2026-01-01T10:47:06Z
dc.date.issued	2023-05-12
dc.description.abstract	The surface structure and electronic characteristics of nanocrystalline phases and 2-7-nm-thick Ga1-xAlxAs films formed on the GaAs(111) surface by Al+ ion implantation are investigated. The bandgap Eg of the Ga0.5Al0.5As nanocrystalline surface phase 25-30 nm in size is determined to be 2.8-2.9 eV
dc.format	application/pdf
dc.identifier.uri	https://zienjournals.com/index.php/tjet/article/view/3907
dc.identifier.uri	https://asianeducationindex.com/handle/123456789/60790
dc.language.iso	eng
dc.publisher	Zien Journals
dc.relation	https://zienjournals.com/index.php/tjet/article/view/3907/3237
dc.rights	https://creativecommons.org/licenses/by-nc/4.0
dc.source	Texas Journal of Engineering and Technology; Vol. 20 (2023): TJET; 9-13
dc.source	2770-4491
dc.subject	morphology
dc.subject	ion implantation
dc.subject	electronic structure
dc.title	Ga1-xAlxAs nanostructures grown on the GaAs Surface by Ion Implantation
dc.type	info:eu-repo/semantics/article
dc.type	info:eu-repo/semantics/publishedVersion
dc.type	Peer-reviewed Article

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