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CHANGE OF DEEP CENTERS DURING OPERATION ALGAAS LIGHT EMITTING DIODES

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dc.contributor.authorAbdullaev Jamolitdin Solijonovich
dc.date.accessioned2025-12-29T12:11:42Z
dc.date.issued2024-06-28
dc.description.abstractLight-emitting diodes (LEDs) are widely used in optoelectronics. In this regard, studying the degradation process of LEDs, that is, changes in their parameters during operation, is an urgent task both from the point of view of elucidating the physics of elementary processes causing degradation and their mechanisms, and to improve the reliability of devices. The paper presents the results of a study of the degradation process of LEDs based on Al Ga As:Te(x 0,34) Al Ga As:Zn-GaAs:Zn x x 1 0,34 0,66 − − heterostructures obtained by liquidphase epitaxy. When studying the degradation phenomenon, along with classical methods of studying electroluminescence spectra in the temperature range 77-300K, capacitance-voltage and current-voltage characteristics, modern highly informative methods were used.
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dc.identifier.urihttps://westerneuropeanstudies.com/index.php/1/article/view/1268
dc.identifier.urihttps://asianeducationindex.com/handle/123456789/18294
dc.language.isoeng
dc.publisherWestern European Studies
dc.relationhttps://westerneuropeanstudies.com/index.php/1/article/view/1268/848
dc.rightsCopyright (c) 2024 Western European Journal of Modern Experiments and Scientific Methods
dc.rightshttps://creativecommons.org/licenses/by-nc/4.0
dc.sourceWestern European Journal of Modern Experiments and Scientific Methods; Vol. 2 No. 6 (2024): WEJMESM; 244-251
dc.source2942-1896
dc.subjectlight-emitting diodes
dc.subjectliquid-phase epitaction
dc.subjectphotoluminescence
dc.titleCHANGE OF DEEP CENTERS DURING OPERATION ALGAAS LIGHT EMITTING DIODES
dc.typeinfo:eu-repo/semantics/article
dc.typeinfo:eu-repo/semantics/publishedVersion
dc.typePeer-reviewed Article

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