INFLUENCE ON PHOTOELECTRIC PARAMETERS OF NON-UNIFORM LIGHT ABSORPTION IN STRUCTURES BASED ON a-Si:H

dc.contributor.author	U. Bobokhodzhaev
dc.contributor.author	M. Usmanov
dc.contributor.author	A. Botirjonov
dc.date.accessioned	2025-12-29T11:30:15Z
dc.date.issued	2023-07-07
dc.description.abstract	In this manuscript gives the conclusion of an analytical expression that determines the dependence of the height of the potential barrier, which is obtained upon unevenly light absorption of over the thickness of the i-layer in the target of video with n-i-p structures based on a-Si:H, on the light intensity. In addition, it is investigated that the dependence of the width of space charge region (SCR) on certain features of a-Si:H .
dc.format	application/pdf
dc.identifier.uri	https://americanjournal.org/index.php/ajtas/article/view/1046
dc.identifier.uri	https://asianeducationindex.com/handle/123456789/16978
dc.language.iso	eng
dc.publisher	American Journals Publishing
dc.relation	https://americanjournal.org/index.php/ajtas/article/view/1046/960
dc.rights	https://creativecommons.org/licenses/by-nc/4.0
dc.source	American Journal of Technology and Applied Sciences; Vol. 14 (2023); 10-15
dc.source	2832-1766
dc.subject	Hydrogenated Amorphous Silicon(a-Si:H), target of Vidicon, tails of Conductive and Valence zones,State density, gap mobility.
dc.title	INFLUENCE ON PHOTOELECTRIC PARAMETERS OF NON-UNIFORM LIGHT ABSORPTION IN STRUCTURES BASED ON a-Si:H
dc.type	info:eu-repo/semantics/article
dc.type	info:eu-repo/semantics/publishedVersion
dc.type	Peer-reviewed Article

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