Influence Of Impurity Ni Atoms on The Electrophysical Parameters of Si

dc.contributor.author	N.A.Turgunov
dc.contributor.author	E.Kh.Berkinov
dc.contributor.author	R.M.Turmanova
dc.contributor.author	N.B.Xaytimmetov
dc.contributor.author	L.E.Madaliyev
dc.date.accessioned	2026-01-02T11:47:26Z
dc.date.issued	2023-06-26
dc.description.abstract	Currently, silicon single crystals doped with impurity atoms of 3d transition metals forming bulk impurity nozzles in silicon are considered widely studied materials in terms of obtaining semiconductor materials with predetermined parameters, as well as control of electrophysical parameters
dc.format	application/pdf
dc.identifier.uri	https://geniusjournals.org/index.php/ejpcm/article/view/4606
dc.identifier.uri	https://asianeducationindex.com/handle/123456789/78128
dc.language.iso	eng
dc.publisher	Genius Journals
dc.relation	https://geniusjournals.org/index.php/ejpcm/article/view/4606/3918
dc.source	Eurasian Journal of Physics,Chemistry and Mathematics; Vol. 19 (2023): EJPCM; 126-130
dc.source	2795-7667
dc.subject	electrophysical
dc.subject	parameters
dc.subject	obtaining
dc.title	Influence Of Impurity Ni Atoms on The Electrophysical Parameters of Si
dc.type	info:eu-repo/semantics/article
dc.type	info:eu-repo/semantics/publishedVersion
dc.type	Peer-reviewed Article

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