INVESTIGATION OF THE PROPERTIES OF Ge1-x Snx SEMICONDUCTOR SOLID MIXING ZONE STRUCTURE
| dc.contributor.author | Jumaniyozova Darmonjon Ro‘Zmetovna | |
| dc.date.accessioned | 2025-12-28T18:13:11Z | |
| dc.date.issued | 2025-05-31 | |
| dc.description.abstract | Currently, the fields of nanoelectronics, optoelectronics and photonics are developing rapidly. In these areas, the creation of effective working materials is an important task. Traditional Si&Ge based semiconductors are not suitable for photonics because they have an indirect energy gap. | |
| dc.format | application/pdf | |
| dc.identifier.uri | https://ajird.journalspark.org/index.php/ajird/article/view/1566 | |
| dc.identifier.uri | https://asianeducationindex.com/handle/123456789/11095 | |
| dc.language.iso | eng | |
| dc.publisher | Journals Park Publishing | |
| dc.relation | https://ajird.journalspark.org/index.php/ajird/article/view/1566/1504 | |
| dc.source | American Journal of Interdisciplinary Research and Development; Vol. 40 (2025); 76-84 | |
| dc.source | 2771-8948 | |
| dc.title | INVESTIGATION OF THE PROPERTIES OF Ge1-x Snx SEMICONDUCTOR SOLID MIXING ZONE STRUCTURE | |
| dc.type | info:eu-repo/semantics/article | |
| dc.type | info:eu-repo/semantics/publishedVersion | |
| dc.type | Peer-reviewed Article |
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