Effect Of Nuclear-Transmuted PType Silicon with Fast Neutrons on Electrophysical Properties

dc.contributor.author	Makhmudov Sh.A
dc.contributor.author	Mirzarayimov Zh.Z
dc.contributor.author	Mirzarayimova F.Z
dc.contributor.author	Mamadalieva G.K
dc.date.accessioned	2026-01-01T21:15:40Z
dc.date.issued	2023-01-23
dc.description.abstract	The influence of defects induced by fast neutron irradiation on the carrier removal rate in reference p-Si and neutron transmutation doped silicon (p-Si < B, P >) was investigated by the Hall effect and specific resistance techniques at room temperature. It is shown that the carrier removal rate is larger in p-Si < B, P >, than that of p-Si . The barrier model was proposed for explanation of the observed effect..
dc.format	application/pdf
dc.identifier.uri	https://geniusjournals.org/index.php/erb/article/view/3206
dc.identifier.uri	https://asianeducationindex.com/handle/123456789/66954
dc.language.iso	eng
dc.publisher	Genius Journals
dc.relation	https://geniusjournals.org/index.php/erb/article/view/3206/2724
dc.source	Eurasian Research Bulletin ; Vol. 16 (2023): ERB; 156-160
dc.source	2795-7675
dc.subject	thermal and radiation defects
dc.subject	neutron-doped silicon
dc.title	Effect Of Nuclear-Transmuted PType Silicon with Fast Neutrons on Electrophysical Properties
dc.type	info:eu-repo/semantics/article
dc.type	info:eu-repo/semantics/publishedVersion
dc.type	Peer-reviewed Article

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