PERFORMANCE ANALYSIS OF EPITAXIAL SILICON P-N FILMS IN NEXT-GENERATION THERMAL ENERGY CONVERSION DEVICES

Abstract

Epitaxial silicon p-n films have emerged as a critical material in the advancement of thermal energy conversion technologies. These structures offer the potential to convert waste heat into electricity, providing a sustainable energy solution. This article explores the performance analysis of epitaxial silicon p-n films in next-generation thermal energy conversion devices. It examines their thermoelectric properties, fabrication techniques, and challenges in optimizing their efficiency. A focus is placed on their Seebeck coefficient, electrical conductivity, and thermal conductivity. Additionally, this paper discusses the importance of nanostructuring and doping concentration in improving performance. Overall, epitaxial silicon p-n films show promise in enhancing thermal-to-electric energy conversion for applications ranging from industrial waste heat recovery to microelectronics.