The influence of rare earth elements on the optical properties of silicon epitaxial films

dc.contributor.author	Sayitova S
dc.contributor.author	Saparniyazova G
dc.contributor.author	Sharibaev M.
dc.date.accessioned	2026-01-26T20:48:27Z
dc.date.issued	2026-01-22
dc.description.abstract	The results of growing erbium-doped silicon epitaxial layers using two different growth modes are presented: conventional molecular beam epitaxy (MBE) and solid-phase epitaxy (SPE). It is shown that an erbium-doped silicon layer deposited by PFE on a cold substrate and subsequently annealed exhibits more intense photoluminescence at a wavelength of 1.54 µm than layers grown by MBE
dc.format	application/pdf
dc.identifier.uri	https://zienjournals.com/index.php/tjet/article/view/6690
dc.identifier.uri	10.62480/tjet.2026.vol52.pp37-39
dc.identifier.uri	https://asianeducationindex.com/handle/123456789/112693
dc.language.iso	eng
dc.publisher	Zien Journals
dc.relation	https://zienjournals.com/index.php/tjet/article/view/6690/5424
dc.rights	https://creativecommons.org/licenses/by-nc/4.0
dc.source	Texas Journal of Engineering and Technology; Vol. 52 (2026): TJET; 37-39
dc.source	2770-4491
dc.subject	photoluminescence
dc.subject	epitaxial film
dc.subject	deformation
dc.title	The influence of rare earth elements on the optical properties of silicon epitaxial films
dc.type	info:eu-repo/semantics/article
dc.type	info:eu-repo/semantics/publishedVersion
dc.type	Peer-reviewed Article

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