Effect of erbium atom on photoluminescent properties of AlxGa1-xAs
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Genius Journals
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Radiation characteristics of GaAs and AlхGa1-хAs epitaxial layers with addition of rareearth element Yb are determined by photoluminescence method. In the exciton regions of epitaxial films, new lines of photoluminescent maxima AlхGa1-хAs determined for the intended ytterbium atoms. The effect of the concentration of the ytterbium atom on the change in the photoluminescence characteristics of the GaAs and AlхGa1-хAs epitaxial films was determined.