Effect of erbium atom on photoluminescent properties of AlxGa1-xAs

dc.contributor.author	A. Shamuratova
dc.contributor.author	M. Sharibaev
dc.contributor.author	Saparniyazova G.
dc.date.accessioned	2026-01-02T11:47:43Z
dc.date.issued	2025-04-05
dc.description.abstract	Radiation characteristics of GaAs and AlхGa1-хAs epitaxial layers with addition of rareearth element Yb are determined by photoluminescence method. In the exciton regions of epitaxial films, new lines of photoluminescent maxima AlхGa1-хAs determined for the intended ytterbium atoms. The effect of the concentration of the ytterbium atom on the change in the photoluminescence characteristics of the GaAs and AlхGa1-хAs epitaxial films was determined.
dc.format	application/pdf
dc.identifier.uri	https://geniusjournals.org/index.php/ejpcm/article/view/6830
dc.identifier.uri	https://asianeducationindex.com/handle/123456789/78248
dc.language.iso	eng
dc.publisher	Genius Journals
dc.relation	https://geniusjournals.org/index.php/ejpcm/article/view/6830/5667
dc.rights	Copyright (c) 2025 A. Shamuratova, M. Sharibaev, Saparniyazova G.
dc.rights	https://creativecommons.org/licenses/by-nc/4.0
dc.source	Eurasian Journal of Physics,Chemistry and Mathematics; Vol. 42 (2025): EJPCM; 5-8
dc.source	2795-7667
dc.subject	photoluminescence
dc.subject	quantum well
dc.subject	temperature
dc.title	Effect of erbium atom on photoluminescent properties of AlxGa1-xAs
dc.type	info:eu-repo/semantics/article
dc.type	info:eu-repo/semantics/publishedVersion
dc.type	Peer-reviewed Article

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