STUDY OF PHOTODIODE STRUCTURES IN THE GALLIUM ARSENIDE-CADMIUM SULFIDE SYSTEM
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American Journals
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It is shown in this work that in a two barrier photodiode structure with a common modulated base region, the spectral characteristics for the cases of blockable p-n-hetero- (pGaAs-nCdS) and metal-semiconductor (m-pGaAs) junctions can have an identical form, where the formation mechanism is determined by the processes, occurring in the space charge regions located mainly in the common (pGaAs) region.